This February, Samsung started shipping HBM4 memory to its customers with a promise to send them samples of the improved HBM4E later this year – well, “later this year” is now. As the title says, the new variant has more capacity with the same 12-layer design, it offers higher bandwidth and runs cooler.
Samsung HBM4E design currently has a 12-layer configuration, which works out to 48GB capacity. This is up from 36GB with HBM4. Samsung is also developing 32GB (8-layer) and 64GB (16-layer) variants to give its customers more options when building their designs.
In addition to the 33% increase in capacity, HBM4E is around 20% faster – per-pin speed is now 14Gbps for a total of 3.6 terabytes per second per stack. For comparison, HBM4 does 11.7Gbps per pin and 3.6 terabytes per second per stack.
A stack of Samsung HBM4E memory
The HBM4E technology is a combination of 6th generation “1c” (10nm class) for the memory dies and a 4nm logic base die. Samsung reworked the design to improve energy efficiency by 16% – this means memory uses less power and generates less heat. But it’s even better – the new design reduces thermal resistance by at least 14%, so the memory is easier to cool too.
Samsung says that its capacity to produce HBM4 memory is growing and the new HBM4E will accelerate AI systems even more. The design has room to improve too – the 14Gbps bandwidth can be increased to 16Gbps in the future.
“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E. Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market,” said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics.
